Negative threshold voltage shift in an a-IGZO thin film transistor under X-ray irradiation

A New Voltage-Programmed Pixel Structure Compensating for Threshold Voltage Shift of Organic Thin Film Transistor

A new voltage-programmed pixel circuit using soluble-processed organic thin film transistors (OTFTs) for an active matrix organic light emitting diode (AMOLED) is proposed. The proposed circuit is composed of four switching TFTs, one driving TFT and one storage capacitor, which is simulated by HSPICE. The proposed circuit can compensate for the non-uniformity of OLED current caused by the thres...

Nonuniform threshold voltage profile in a-Si:H thin film transistor stressed under both gate and drain biases

In this paper we show that an a-Si:H thin film transistor TFT stressed with bias temperature stress BTS under both gate bias and drain bias produces a nonuniform threshold voltage profile which can be obtained from the quasi-Fermi potential profile and the threshold voltage Vt -shift data of BTS under the gate bias only. The transfer and output characteristics calculated with this nonuniform Vt...

On the Reliability of an InGaZnO Thin-Film Transistor under Negative Bias Illumination Stress

The positive gate-bias temperature stress (PBTS)-induced instability in top gate self-aligned coplanar InGaZnO thin-film transistors is experimentally decomposed into contributions of distinct mechanisms by combining the stress-time-divided measurements and the extraction of subgap density-of-states (DOS) from the optical response of C-V characteristics. It is found that a total threshold volta...

Effects of Additive Elements on TFT Characteristics in Amorphous IGZO Films under Light Illumination Stress

We have studied effects of additive elements into the channel layers of amorphous IGZO TFTs on threshold voltage shift issues under light illumination stress condition. By addition of Hf or Si element, the Vth shift under light illumination and negative bias-temperature stress and illumination stress conditions was drastically suppressed while the switching operation of TFTs using IGZO with Mn ...

Investigation on stress induced hump phenomenon in IGZO thin film transistors under negative bias stress and illumination